[{"data":1,"prerenderedAt":701},["ShallowReactive",2],{"schematic:2n2222-relay-driver-flyback-protection:es":3},{"schematic":4,"title":19,"shortDescription":22,"proseSource":659,"localizationFallbackIssues":660,"related":661,"confirmations":660},{"schemaVersion":5,"governance":6,"slug":18,"title":19,"cluster":20,"tier":21,"shortDescription":22,"deepTechnicalOverview":23,"theoryOfOperation":24,"keySpecifications":25,"applications":56,"gotchas":61,"formulas":80,"bom":162,"interactiveElements":214,"circuitJson":325,"svg":658},"1.0",{"publication":7,"verification":10,"provenance":15},{"status":8,"publishedDate":9},"published","2026-11-04",{"status":11,"verifiedDate":9,"verifiedBy":12,"checklist":13},"verified","Gemini (AI documentary, CAD and hardware-localization review against Central Semiconductor 2N2222A and Omron G5V-1 datasheets; owner publication authorization; no bench, simulation, independent second review or native-speaker claim)",{"schema":14,"technicalFacts":14,"relationships":14,"sources":14},true,{"sourceUrls":16},[17],"https:\u002F\u002Fmy.centralsemi.com\u002Fdatasheets\u002F2N2221A-2222A.PDF","2n2222-relay-driver-flyback-protection","Controlador de relé con BJT NPN 2N2222 \u002F 2N2222A y diodo flyback 1N4007","microcontroller_interfaces","Tier 1","Circuito de conmutación de lado bajo con transistor bipolar NPN para relé de 12V con diodo flyback 1N4007, excitación en saturación y desacoplo de alimentación para MCU de 3.3V\u002F5V.","Este clásico controlador de lado bajo (low-side driver) discreto conmuta una bobina de relé electromecánico de 12V a partir de una salida GPIO de microcontrolador estándar de 3.3V o 5.0V, proporcionando aislamiento galvánico completo entre los circuitos lógicos y las cargas de CA\u002FCC de alta tensión. El núcleo de conmutación utiliza el transistor de unión bipolar NPN estándar de la industria Central Semiconductor 2N2222A en encapsulado de orificio pasante TO-92. El transistor opera estrictamente como interruptor saturado: al excitarse en saturación, la tensión colector-emisor cae a VCE(sat) ≤ 0.3V, aplicando prácticamente toda la tensión de alimentación de +12V a través del devanado del relé. La excitación de base se establece mediante la resistencia en serie R1 (1.0 kΩ, 1%), que suministra 4.3 mA desde lógica de 5.0V (o 2.6 mA desde 3.3V). Esto determina una ganancia de corriente forzada (beta forzada) de βforced ≈ 7 a 15, muy por debajo de la ganancia activa mínima del transistor (hFE(min) = 75 a 100), garantizando saturación profunda frente a variaciones térmicas y tolerancias de fabricación. Una resistencia pull-down de base R2 (10 kΩ, 1%) mantiene la base firmemente a 0V durante el encendido del microcontrolador, reinicio o programación ISP cuando los pines flotan en alta impedancia, evitando disparos espurios. En antiparalelo con la bobina se conecta un diodo rectificador estándar 1N4007 (D1). Al cortar el transistor, el colapso repentino del campo magnético induce un transitorio de fuerza contraelectromotriz (-L di\u002Fdt) que de otro modo superaría la tensión de ruptura V(BR)CEO (40V) destruyendo el silicio; D1 fija este transitorio a VCC + VF (aprox. 13.1V), recirculando la energía inductiva de forma segura por el devanado. La estabilidad de la alimentación está garantizada por el condensador cerámico C1 (100 nF) y el condensador electrolítico C2 (47 µF).","### 1. Topología del circuito y arquitectura de conmutación de lado bajo\nEl circuito está estructurado como un conmutador de lado bajo (low-side sink driver) en emisor común NPN. La bobina del relé electromecánico (K1) se conecta entre el carril positivo de alimentación (+12 V nominal) y el terminal de colector del transistor Q1 (Central Semiconductor 2N2222A). El emisor de Q1 se conecta directamente a la masa de potencia (GND). Cuando Q1 conduce, cierra el camino de corriente a masa, llevando el terminal inferior de la bobina a VCE(sat) y energizando el devanado. Como el emisor está fijado a 0 V, la tensión de excitación base-emisor VBE queda referenciada directamente a la masa lógica, permitiendo el control directo desde pines GPIO monomodo del microcontrolador.\n\n### 2. Fase 1: Estado de alta impedancia y fijación de base durante el reinicio\nCuando el microcontrolador está apagado, en reinicio o ejecutando el gestor de arranque inicial, sus pines GPIO residen en modo de entrada de alta impedancia (tri-state). La resistencia de purga pull-down R2 (10 kΩ) conecta firmemente la base a masa (0 V). Esto drena cualquier carga electrostática parásita o fuga de circuito impreso ($I_{CBO} \\le 10\\text{ nA}$), asegurando que $V_{BE} = 0\\text{ V}$. Al estar $V_{BE}$ muy por debajo del umbral de conducción de la unión PN de silicio (0.65 V), Q1 permanece completamente en corte ($I_C \\approx 0$), desenergizando por completo la bobina del relé y evitando cierres falsos de contactos.\n\n### 3. Fase 2: Transición a nivel ALTO y excitación de saturación de base\nCuando el microcontrolador activa el pin GPIO en nivel ALTO (+5.0 V desde AVR\u002FArduino o +3.3 V desde ESP32\u002FSTM32), la unión base-emisor se polariza en directa. La corriente de base $I_B$ queda establecida por la resistencia limitadora R1:\n$$I_B = \\frac{V_{IN} - V_{BE(sat)}}{R_1}$$\nPara una señal de 5.0 V con $V_{BE(sat)} \\approx 0.75\\text{ V}$, la corriente de base es $I_B = (5.0\\text{ V} - 0.75\\text{ V}) \u002F 1000\\ \\Omega = 4.25\\text{ mA}$. Para una bobina de relé de 12V con $R_{coil} = 400\\ \\Omega$, la corriente nominal es $I_{coil} \\approx (12\\text{ V} - 0.2\\text{ V}) \u002F 400\\ \\Omega = 29.5\\text{ mA}$. La ganancia forzada resultante es:\n$$\\beta_{forced} = \\frac{I_C}{I_B} = \\frac{29.5\\text{ mA}}{4.25\\text{ mA}} \\approx 6.9$$\nAl ser $\\beta_{forced} \\ll h_{FE(min)} = 75$, el transistor entra en saturación profunda: portadores minoritarios inundan la base y la tensión colector-emisor colapsa a su mínimo nivel de saturación ($V_{CE(sat)} \\le 0.3\\text{ V}$).\n\n### 4. Fase 3: Energización de bobina en saturación y disipación térmica\nEn saturación, casi toda la tensión de alimentación menos $V_{CE(sat)}$ se aplica a la bobina del relé ($V_{coil} \\approx 12.0\\text{ V} - 0.2\\text{ V} = 11.8\\text{ V}$). El campo magnético se establece rápidamente, atrayendo la armadura y cerrando los contactos normalmente abiertos (NO). La potencia disipada en el transistor consta de las pérdidas de colector y base:\n$$P_D = V_{CE(sat)} \\cdot I_C + V_{BE(sat)} \\cdot I_B$$\n$$P_D = (0.2\\text{ V} \\times 29.5\\text{ mA}) + (0.75\\text{ V} \\times 4.25\\text{ mA}) = 5.9\\text{ mW} + 3.2\\text{ mW} = 9.1\\text{ mW}$$\nEsta potencia de apenas 9.1 mW es insignificante frente al límite de 625 mW del encapsulado TO-92, manteniendo el transistor frío sin disipador térmico.\n\n### 5. Fase 4: Colapso inductivo y fijación flyback con diodo 1N4007\nCuando la señal GPIO vuelve a nivel BAJO, la corriente de base cesa y Q1 pasa a corte. La bobina posee una inductancia considerable ($L \\approx 0.5\\dots 2\\text{ H}$). El cese repentino de corriente genera un fuerte pico de fuerza contraelectromotriz:\n$$v_L = -L \\frac{di}{dt}$$\nSin protección, la tensión de colector subiría instantáneamente a cientos de voltios, provocando ruptura por avalancha de la unión colector-emisor de 40V. El diodo flyback antiparalelo D1 (1N4007) entra en conducción directa en cuanto la tensión supera $V_{CC} + V_F$, fijando el pico a:\n$$V_{clamp} = V_{CC} + V_F \\approx 12.0\\text{ V} + 1.1\\text{ V} = 13.1\\text{ V}$$\nLa energía magnética circula en bucle cerrado a través del diodo y la resistencia de bobina ($R_{coil}$), disipándose térmicamente de forma segura hasta extinguirse.",[26,29,32,35,38,41,44,47,50,53],{"label":27,"value":28},"Tensión de alimentación del relé (VLOAD)","+12.0 V CC nominal (rango operativo de +10.8 V a +13.2 V)",{"label":30,"value":31},"Tensión lógica de control (VIN)","+3.3 V a +5.0 V lógica CMOS \u002F TTL de microcontrolador",{"label":33,"value":34},"Corriente continua de colector máxima (IC)","800 mA continuo (Central Semiconductor 2N2222A)",{"label":36,"value":37},"Tensión de ruptura colector-emisor (V(BR)CEO)","40 V mínimo",{"label":39,"value":40},"Tensión de saturación (VCE(sat))","≤ 0.3 V a IC = 150 mA, IB = 15 mA (típico ≤ 0.2 V a 30 mA)",{"label":42,"value":43},"Resistencia limitadora de base (R1)","1.0 kΩ 1% película metálica (IB = 4.25 mA a 5V, 2.55 mA a 3.3V)",{"label":45,"value":46},"Resistencia pull-down de base (R2)","10 kΩ 1% película metálica (garantiza corte durante reinicio de MCU)",{"label":48,"value":49},"Diodo de fijación flyback (D1)","1N4007 (1000 V VRRM, 1.0 A continuo, corriente de choque 30 A)",{"label":51,"value":52},"Corriente nominal de bobina de relé","12.5 mA a 30.0 mA (Omron G5V-1-DC12 estándar \u002F alta sensibilidad)",{"label":54,"value":55},"Desacoplo de carril CC (C1, C2)","100 nF 50V X7R cerámico MLCC + 47 µF 25V electrolítico de aluminio",[57,58,59,60],"Conexión directa de pines GPIO de Arduino, ESP32, STM32 y Raspberry Pi con relés electromecánicos de 12V","Control de válvulas solenoides neumáticas, cerraduras electromagnéticas y actuadores de retención","Conmutación galvánica de cargas de red de CA (120V\u002F240V, iluminación, calefactores, bombas) mediante relé","Conmutación de cargas auxiliares de CC de 12V industriales y de automoción mediante señales lógicas",[62,67,71,75],{"title":63,"trap":64,"solution":65,"severity":66},"Ruptura destructiva por avalancha inductiva sin diodo flyback","Conmutar bobinas inductivas sin diodo en antiparalelo fuerza el colapso magnético contra el transistor. La tensión de colector sube a cientos de voltios (-L di\u002Fdt), superando el límite de 40V del BJT y destruyendo la unión de silicio.","Instale siempre un diodo flyback (como 1N4007 o Schottky 1N5819) directamente en bornes de la bobina con cátodo a +12V y ánodo al colector, minimizando la longitud de pistas para evitar inductancias parásitas.","critical",{"title":68,"trap":69,"solution":70,"severity":66},"Corriente de base insuficiente que provoca operación en zona lineal","Elegir una resistencia de base excesivamente alta (ej. 10 kΩ o 47 kΩ) deja al transistor sin corriente suficiente. Opera en zona lineal en lugar de saturación, con VCE entre 2V y 6V, provocando calentamiento severo del BJT.","Diseñe para una ganancia forzada βforced = IC \u002F IB ≤ 10 a 15. Para una bobina de 30 mA y lógica de 3.3V, use R1 = 1.0 kΩ, garantizando IB ≈ 2.5 mA y saturación profunda en cualquier temperatura.",{"title":72,"trap":73,"solution":74,"severity":66},"Base flotante durante el arranque y reinicio del microcontrolador","Omitir la resistencia pull-down R2 deja la base flotante en alta impedancia cuando los pines GPIO están en modo tri-state durante el arranque o reprogramación, provocando conmutaciones involuntarias por ruido electromagnético.","Instale siempre una resistencia de 10 kΩ entre base y masa, situada físicamente junto al transistor para asegurar que la base permanezca a 0V hasta que el firmware tome el control.",{"title":76,"trap":77,"solution":78,"severity":79},"Retardo en la apertura de contactos por el diodo rectificador estándar","Un diodo estándar fija la tensión a solo +1.1V sobre VCC, provocando una descarga lenta según la constante τ = L \u002F Rcoil. En aplicaciones rápidas, esto prolonga el tiempo de desconexión y acentúa el arco en los contactos.","Para la mayoría de relés, el 1N4007 es robusto y fiable. Si se requiere apertura ultrarrápida (\u003C 5 ms), conecte un diodo Zener (ej. 24V) en serie ánodo con ánodo con el diodo, o use una red snubber RC.","warning",[81,105,125,142],{"name":82,"latexOrText":83,"description":84,"variables":85},"Corriente de excitación de base en saturación","I_B = \\frac{V_{IN} - V_{BE(sat)}}{R_1}","Calcula la corriente de base suministrada al transistor para forzarlo a saturación profunda.",[86,91,96,100],{"symbol":87,"name":88,"typicalValue":89,"unit":90},"I_B","Corriente de excitación de base","0.00425","A",{"symbol":92,"name":93,"typicalValue":94,"unit":95},"V_{IN}","Tensión a nivel alto del pin GPIO del microcontrolador","5.0","V",{"symbol":97,"name":98,"typicalValue":99,"unit":95},"V_{BE(sat)}","Caída de tensión base-emisor en saturación","0.75",{"symbol":101,"name":102,"typicalValue":103,"unit":104},"R_1","Resistencia en serie de base","1000","Ω",{"name":106,"latexOrText":107,"description":108,"variables":109},"Ganancia forzada beta (factor de sobresaturación)","\\beta_{forced} = \\frac{I_{coil}}{I_B} \\ll h_{FE(min)}","Evalúa el grado de sobresaturación comparando la ganancia forzada con la ganancia activa mínima de la hoja de datos.",[110,115,119,121],{"symbol":111,"name":112,"typicalValue":113,"unit":114},"\\beta_{forced}","Ganancia de corriente forzada (forced beta)","7.0","ratio",{"symbol":116,"name":117,"typicalValue":118,"unit":90},"I_{coil}","Corriente operativa de la bobina del relé","0.030",{"symbol":87,"name":120,"typicalValue":89,"unit":90},"Corriente de saturación de base",{"symbol":122,"name":123,"typicalValue":124,"unit":114},"h_{FE(min)}","Ganancia de corriente continua mínima hFE","75",{"name":126,"latexOrText":127,"description":128,"variables":129},"Tensión pico fijada por fuerza contraelectromotriz","V_{clamp} = V_{CC} + V_F(D_1)","Determina la tensión máxima que aparece en el colector del transistor durante el colapso del campo inductivo de la bobina.",[130,134,138],{"symbol":131,"name":132,"typicalValue":133,"unit":95},"V_{clamp}","Tensión pico fijada en colector","13.1",{"symbol":135,"name":136,"typicalValue":137,"unit":95},"V_{CC}","Tensión positiva de alimentación de carga","12.0",{"symbol":139,"name":140,"typicalValue":141,"unit":95},"V_F(D_1)","Caída directa del diodo flyback","1.1",{"name":143,"latexOrText":144,"description":145,"variables":146},"Disipación de potencia en conducción saturada del transistor","P_D = V_{CE(sat)} \\cdot I_C + V_{BE(sat)} \\cdot I_B","Calcula la potencia eléctrica total disipada en forma de calor en el chip del transistor durante el estado de conducción continua.",[147,152,156,159,161],{"symbol":148,"name":149,"typicalValue":150,"unit":151},"P_D","Disipación total de potencia del transistor","0.0091","W",{"symbol":153,"name":154,"typicalValue":155,"unit":95},"V_{CE(sat)}","Tensión de saturación colector-emisor","0.2",{"symbol":157,"name":158,"typicalValue":118,"unit":90},"I_C","Corriente de colector (corriente de bobina)",{"symbol":97,"name":160,"typicalValue":99,"unit":95},"Tensión de saturación base-emisor",{"symbol":87,"name":88,"typicalValue":89,"unit":90},[163,172,180,187,194,200,207],{"refDes":164,"componentName":165,"value":166,"package":167,"quantity":168,"componentSlug":169,"role":170,"notes":171},"Q1","Transistor bipolar NPN de uso general","2N2222A","TO-92",1,"2n2222","Conmutador saturado de lado bajo para relé","Transistor NPN rápido Central Semiconductor 40V 800mA en encapsulado TO-92 de orificio pasante.",{"refDes":173,"componentName":174,"value":175,"package":176,"quantity":168,"componentSlug":177,"role":178,"notes":179},"D1","Diodo rectificador \u002F fijador de uso general","1N4007","DO-41","1n4007","Supresión de picos inductivos flyback","Diodo rectificador Micro Commercial Co 1000V 1.0A para supresión de sobretensiones de bobina.",{"refDes":181,"componentName":182,"value":183,"package":184,"quantity":168,"role":185,"notes":186},"K1","Relé subminiatura electromecánico SPDT","G5V-1-DC12","DIP-5 \u002F THT","Actuador electromecánico galvánicamente aislado","Relé subminiatura Omron Electronics con bobina de 12V CC, resistencia de 960Ω y contactos de 1A 24VCC \u002F 0.5A 125VCA.",{"refDes":188,"componentName":189,"value":190,"package":191,"quantity":168,"role":192,"notes":193},"R1","Resistencia limitadora de base 1 kΩ","1kΩ","Axial \u002F 0805","Limitador de corriente de excitación de base","Resistencia de película metálica de 1.0 kΩ 1% 0.25W que fija la corriente de saturación desde lógica de 3.3V\u002F5V.",{"refDes":195,"componentName":196,"value":197,"package":191,"quantity":168,"role":198,"notes":199},"R2","Resistencia pull-down de base 10 kΩ","10kΩ","Supresión de estado flotante durante reinicio","Resistencia de película metálica de 10 kΩ 1% 0.25W que fija la base a 0V durante el reinicio del MCU.",{"refDes":201,"componentName":202,"value":203,"package":204,"quantity":168,"role":205,"notes":206},"C1","Condensador cerámico de desacoplo MLCC","100nF 50V","0805 \u002F Radial","Derivación de ruido de conmutación de alta frecuencia","Condensador cerámico X7R de 100 nF 50V ubicado directamente junto al carril de relé.",{"refDes":208,"componentName":209,"value":210,"package":211,"quantity":168,"role":212,"notes":213},"C2","Condensador electrolítico de desacoplo de aluminio","47µF 25V","Radial CAN 6.3x11mm","Depósito de estabilización del carril de CC","Condensador electrolítico de 47 µF 25V de bajo ESR para amortiguar picos de corriente de atracción de la armadura.",{"P1":215,"R1":226,"R2":236,"G1":243,"Q1":253,"D1":265,"K1":275,"C1":287,"C2":297,"P2":307,"G2":317},{"refDes":216,"name":217,"value":218,"role":219,"description":220,"footprint":221,"specs":222},"P1","Puerto de entrada de control lógico","MCU_GPIO","Entrada de señal de control lógico digital","Se conecta a una salida GPIO de microcontrolador de 3.3V o 5.0V (ESP32, STM32, Arduino, Raspberry Pi) para energizar el relé.","Wire Terminal \u002F Header Pin",{"Rango de tensión de entrada":223,"Lógica de control":224,"Corriente de excitación requerida":225},"+3.3 V a +5.0 V CC","Activo en ALTO (1 = relé activado, 0 = relé liberado)","2.6 mA (a 3.3V) \u002F 4.3 mA (a 5.0V)",{"refDes":188,"name":227,"value":190,"role":228,"description":229,"footprint":230,"specs":231},"Resistencia limitadora de base","Control de corriente de saturación de base","Ajusta la corriente de base para forzar a Q1 a saturación profunda (VCE(sat) ≤ 0.3V), protegiendo el pin GPIO.","Axial 0.25W \u002F SMD 0805",{"Resistencia":232,"Tolerancia":233,"Potencia nominal":234,"Corriente de base calculada":235},"1.0 kΩ","1%","0.25 W","4.3 mA (lógica 5V) \u002F 2.6 mA (lógica 3.3V)",{"refDes":195,"name":237,"value":197,"role":238,"description":239,"footprint":230,"specs":240},"Resistencia pull-down de base","Fijación de corte y protección contra flotación","Mantiene la base a 0V durante el arranque o reprogramación del MCU cuando los pines están en alta impedancia, evitando disparos falsos.",{"Resistencia":241,"Tolerancia":233,"Potencia nominal":234,"Corriente de purga":242},"10 kΩ","0.07 mA (en estado activo)",{"refDes":244,"name":245,"value":246,"role":247,"description":248,"footprint":249,"specs":250},"G1","Referencia de masa de señal lógica","GND","Referencia de masa de señal de entrada","Punto de conexión a tierra del sistema que establece la referencia de 0V para la señal de control y la resistencia pull-down.","System Ground Net",{"Potencial":251,"Dominio \u002F Función":252},"0.0 V","GND de lógica \u002F control",{"refDes":164,"name":254,"value":166,"role":255,"description":256,"footprint":257,"specs":258},"Interruptor BJT NPN de uso general","Conmutador de lado bajo para bobina de relé","Transistor NPN rápido Central Semiconductor 2N2222A con capacidad de hasta 800 mA continuos y baja tensión de saturación.","TO-92 (Through-Hole)",{"Tensión de ruptura colector-emisor V(BR)CEO":259,"Corriente continua de colector IC":260,"VCE(sat) a IC = 150 mA":261,"Ganancia de corriente continua hFE":262,"Disipación total máxima PD":263,"Frecuencia de transición fT":264},"40 V","800 mA","≤ 0.3 V (IB = 15 mA)","100 a 300 (a IC = 150 mA)","625 mW (a TA = 25°C)","300 MHz mínimo",{"refDes":173,"name":266,"value":175,"role":267,"description":268,"footprint":269,"specs":270},"Diodo de fijación flyback inductivo","Supresión de transitorios inductivos","Diodo rectificador conectado en antiparalelo a la bobina. Fija el pico contraelectromotriz a VCC + VF protegiendo a Q1.","DO-41 Through-Hole",{"Tensión inversa repetitiva de pico VRRM":271,"Corriente directa rectificada media IO":272,"Corriente de pico no repetitiva IFSM":273,"Caída de tensión directa VF":274},"1000 V","1.0 A continuo","30 A (semisenoidal de 8.3 ms)","≤ 1.1 V (a IF = 1.0 A)",{"refDes":181,"name":276,"value":277,"role":278,"description":279,"footprint":280,"specs":281},"Bobina de relé electromecánico","12V Relay Coil","Actuador inductivo conmutado","Bobina de relé subminiatura Omron G5V-1-DC12 que requiere 12V CC para conmutar contactos mecánicos.","DIP-5 \u002F Through-Hole",{"Tensión nominal de bobina":282,"Resistencia de bobina Rcoil":283,"Corriente nominal de funcionamiento Icoil":284,"Tensión de accionamiento garantizada":285,"Tensión de liberación garantizada":286},"+12.0 V CC","960 Ω (150 mW alta sensibilidad) a 400 Ω (estándar)","12.5 mA a 30.0 mA","≤ 80% de tensión nominal (9.6 V)","≥ 10% de tensión nominal (1.2 V)",{"refDes":201,"name":288,"value":289,"role":205,"description":290,"footprint":291,"specs":292},"Condensador cerámico de bypass de alta frecuencia","100nF","Condensador cerámico multicapa (MLCC) de bajo ESR que filtra transitorios inductivos directamente en el carril.","0805 SMD \u002F Radial Ceramic",{"Capacidad":293,"Tensión nominal":294,"Dieléctrico":295,"Tolerancia":296},"100 nF (0.1 µF)","50 V CC","X7R (tempco ±15%)","±10%",{"refDes":208,"name":298,"value":299,"role":300,"description":301,"footprint":211,"specs":302},"Condensador electrolítico de desacoplo de volumen","47µF","Estabilización del carril de alimentación de CC","Condensador electrolítico de depósito que absorbe picos de corriente instantáneos durante el accionamiento de la armadura.",{"Capacidad":303,"Tensión nominal":304,"Temperatura de funcionamiento":305,"Tolerancia":306},"47 µF","25 V CC","-40°C a +105°C","±20%",{"refDes":308,"name":309,"value":310,"role":311,"description":312,"footprint":313,"specs":314},"P2","Carril positivo de alimentación de CC","+12V","Fuente de alimentación de bobina de relé","Entrada de alimentación dedicada de +12V CC que suministra la corriente de accionamiento de bobina y fijación catódica.","Power Supply Rail \u002F Pin Terminal",{"Tensión nominal":282,"Rango de funcionamiento":315,"Capacidad de entrega de corriente":316},"+10.8 V a +13.2 V CC (±10%)","≥ 200 mA continuo",{"refDes":318,"name":319,"value":246,"role":320,"description":321,"footprint":322,"specs":323},"G2","Punto estrella de masa de potencia","Retorno a masa de emisor de transistor","Nodo de retorno de masa de potencia para el emisor de 2N2222A y filtros, aislando bucles inductivos de las pistas lógicas.","Power Ground Net",{"Potencial":251,"Dominio \u002F Función":324},"Retorno a tierra de potencia",{"schemaVersion":326,"id":327,"meta":328,"components":335,"nets":424,"junctions":473,"netLabels":497,"wires":498},"1.5","schematic-2n2222-relay-driver-flyback-protection",{"title":329,"locale":330,"grid":331,"source":332},"Controlador de relé con BJT NPN 2N2222 y diodo flyback 1N4007","es",20,{"type":333,"ref":334,"url":17},"datasheet","Central Semiconductor 2N2222A Datasheet & Omron G5V-1 Relay 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lógico infineon irlz44npbf controlado directamente por lógica mcu de 3.3v o 5v.\nconmutador de cc de lado bajo con mosfet de nivel lógico irlz44n\ncircuito conmutador de cc discreto de 12v\u002F24v de lado bajo para cargas inductivas y resistivas con mosfet de canal n de nivel lógico infineon irlz44npbf controlado directamente por lógica mcu de 3.3v o 5v.\nirlz44n logic-level n-channel mosfet low-side dc switch\ndiscrete 12v\u002F24v low-side dc switch circuit driving high-current inductive and resistive loads with an infineon irlz44npbf logic-level mosfet from 3.3v or 5v mcu logic.\nmicrocontroller_interfaces\nmosfet de potencia de canal n de nivel lógico\nirlz44npbf\nq1\nresistor serie de amortiguación de puerta 100 ω\n100ω\nr1\nresistor pull-down de puerta 10 kω\n10kω\nr2\ndiodo de supresión inductiva flyback\n1n4007\nd1\nmotor de cc de escobillas de 12v\n12v dc motor\nm1\ncondensador electrolítico de desacoplo de alimentación 100 µf\n100µf\nc1\ncondensador cerámico de derivación de alta frecuencia 100 nf\n100nf\nc2",{"slug":680,"cluster":20,"tier":21,"supplyVoltage":681,"voltageSpecification":682,"signalDomain":685,"breadboardFriendly":14,"title":686,"shortDescription":687,"bomCount":688,"formulaCount":677,"search":689},"bss138-bidirectional-i2c-level-shifter",[665,666],{"kind":670,"value":683,"label":684},"+3,3 V CC nominal (rango operativo de +1,65 V a +3,6 V)","Alimentación de baja tensión (VDD1)","digital","Desplazador de nivel bidireccional I2C de 3,3 V a 5 V con BSS138","Traductor de nivel de tensión bidireccional para bus I2C que interconecta dominios lógicos de 3,3 V y 5 V mediante dos MOSFET de canal N onsemi BSS138 con resistencias pull-up y desacoplo de alimentación.",8,"desplazador de nivel bidireccional i2c de 3,3 v a 5 v con bss138\ntraductor de nivel de tensión bidireccional para bus i2c que interconecta dominios lógicos de 3,3 v y 5 v mediante dos mosfet de canal n onsemi bss138 con resistencias pull-up y desacoplo de alimentación.\ndesplazador de nivel bidireccional i2c de 3,3 v a 5 v con bss138\ntraductor de nivel de tensión bidireccional para bus i2c que interconecta dominios lógicos de 3,3 v y 5 v mediante dos mosfet de canal n onsemi bss138 con resistencias pull-up y desacoplo de alimentación.\nbss138 bidirectional i2c 3.3v to 5v level shifter\nbidirectional i2c bus voltage level translator interfacing 3.3v and 5v logic domains using two onsemi bss138 n-channel mosfets with pull-up resistors and decoupled supplies.\nmicrocontroller_interfaces\nmosfet de nivel lógico de canal n\nbss138\nq1\nmosfet de nivel lógico de canal n\nbss138\nq2\nresistencia chip smd\n10kω\nr1\nresistencia chip smd\n10kω\nr2\nresistencia chip smd\n10kω\nr3\nresistencia chip smd\n10kω\nr4\ncondensador cerámico multicapa\n100nf\nc1\ncondensador cerámico multicapa\n100nf\nc2",{"slug":691,"cluster":20,"tier":21,"supplyVoltage":692,"voltageSpecification":693,"signalDomain":685,"breadboardFriendly":14,"title":697,"shortDescription":698,"bomCount":688,"formulaCount":699,"search":700},"esp32-auto-reset-flashing-circuit",[665],{"kind":694,"value":695,"label":696},"logic","3,3 V (VDD33 en la DevKitC V4)","Nivel lógico de funcionamiento","Circuito de reinicio automático y arranque del ESP32 (DTR\u002FRTS)","El circuito de dos transistores de las placas de desarrollo de Espressif con el que esptool, Arduino IDE y PlatformIO reinician un ESP32 y arrancan su bootloader serie a través de las líneas DTR y RTS de un puente USB-UART, sin pulsar botones.",3,"circuito de reinicio automático y arranque del esp32 (dtr\u002Frts)\nel circuito de dos transistores de las placas de desarrollo de espressif con el que esptool, arduino ide y platformio reinician un esp32 y arrancan su bootloader serie a través de las líneas dtr y rts de un puente usb-uart, sin pulsar botones.\ncircuito de reinicio automático y arranque del esp32 (dtr\u002Frts)\nel circuito de dos transistores de las placas de desarrollo de espressif con el que esptool, arduino ide y platformio reinician un esp32 y arrancan su bootloader serie a través de las líneas dtr y rts de un puente usb-uart, sin pulsar botones.\nesp32 auto-reset and boot circuit (dtr\u002Frts)\nthe two-transistor circuit from espressif development boards that lets esptool, arduino ide and platformio reset an esp32 and start its serial bootloader through the dtr and rts lines of a usb-to-uart bridge, with no buttons pressed.\nmicrocontroller_interfaces\ntransistor npn de pequeña señal\n2n3904\nq1\ntransistor npn de pequeña señal\n2n3904\nq2\nresistencia\n10kω\nr1\nresistencia\n10kω\nr2\nresistencia\n10kω\nr3\ncondensador cerámico\n1µf\nc1\npulsador táctil\nboot\nsw1\npulsador táctil\nen\nsw2",1793836428557]