[{"data":1,"prerenderedAt":35},["ShallowReactive",2],{"components:category:power_mosfet:es":3},[4,16,25],{"id":5,"slug":5,"mpn":6,"primaryCategory":7,"manufacturers":8,"shortDescription":10,"packages":11,"packageTypes":15,"voltage":-1},"2n7000","2N7000","power_mosfet",[9],"onsemi","MOSFET de canal N onsemi 2N7000 en TO-92 (CASE 135AN), patillaje S-G-D; límites absolutos: VDSS de 60 V e ID continuo de 200 mA a TC = 25°C.",[12],{"packageType":13,"pinCount":14},"TO-92",3,[13],{"id":17,"slug":17,"mpn":18,"primaryCategory":7,"manufacturers":19,"shortDescription":20,"packages":21,"packageTypes":24,"voltage":-1},"bss138","BSS138",[9],"onsemi BSS138: MOSFET de canal N de nivel lógico en SOT-23 (CASE 318-08), pinout G-S-D; límite absoluto VDSS de 50 V y corriente continua ID de 220 mA a TA = 25°C.",[22],{"packageType":23,"pinCount":14},"SOT-23",[23],{"id":26,"slug":26,"mpn":27,"primaryCategory":7,"manufacturers":28,"shortDescription":30,"packages":31,"packageTypes":34,"voltage":-1},"irlz44n","IRLZ44NPbF",[29],"Infineon Technologies","MOSFET de potencia de canal N y nivel lógico Infineon IRLZ44NPbF en TO-220AB, con patillaje G-D-S y lengüeta conectada al drenador; la resistencia en conducción se especifica bajo condiciones de excitación de puerta separadas de 4 V, 5 V y 10 V.",[32],{"packageType":33,"pinCount":14},"TO-220AB",[33],1793836427887]