[{"data":1,"prerenderedAt":257},["ShallowReactive",2],{"component:2n2222:es":3},{"component":4,"localizationFallbackIssues":216,"related":217,"equivalentSlugs":256},{"schemaVersion":5,"governance":6,"id":19,"mpn":20,"slug":19,"primaryCategory":21,"manufacturers":22,"lifecycleStatus":24,"shortDescription":25,"deepTechnicalOverview":26,"packages":27,"absoluteMaximums":48,"parametricAttributes":51,"gotchas":171,"datasheetUrl":17,"documentationSources":186,"applicationCircuits":199,"equivalents":204,"mountedOnBoards":205,"seo":206},"1.0.0",{"publication":7,"verification":10,"provenance":15},{"status":8,"publishedDate":9},"published","2026-10-14",{"status":11,"verifiedDate":9,"verifiedBy":12,"checklist":13},"verified","Codex (independent documentary review against exact manufacturer PDFs and current product rows; source-relative package verification and LLM localization review; owner publication GO, no bench or native-human signoff)",{"schema":14,"technicalFacts":14,"relationships":14,"sources":14},true,{"sourceUrls":16},[17,18],"https:\u002F\u002Fcentral.aeminc.com\u002Fdatasheets\u002F2N2221A.PDF","https:\u002F\u002Fcentral.aeminc.com\u002Fdocs\u002FENGINEERING\u002FPDD\u002FTO_18_PD.PDF","2n2222","2N2222A","bipolar_transistor",[23],"Central Semiconductor","active","Transistor NPN de conmutación Central Semiconductor 2N2222A en TO-18; límites absolutos: VCEO de 40 V e IC continua de 800 mA a TA = 25°C.","Esta página cubre solo Central Semiconductor 2N2222A en TO-18 según la hoja de datos 2N2221A.PDF, R5 (5 de diciembre de 2013). Las características eléctricas se aplican a TA = 25°C salvo indicación contraria y solo bajo las condiciones completas de ensayo. Los máximos absolutos son límites de esfuerzo, no condiciones recomendadas. En el plano del fabricante E1 está a la izquierda, B2 sobre el centro, C3 a la derecha y la lengüeta abajo a la izquierda; se describe la orientación del plano sin afirmar una vista superior o inferior confirmada por separado. La fila exacta del catálogo figura como Active; el aviso adjunto PDN01195 afecta a otros tipos enumerados. No traslade estas especificaciones a otros fabricantes o variantes plásticas.",[28],{"packageType":29,"pinCount":30,"thermalResistanceThetaJA":31,"thermalResistanceThetaJC":32,"pins":33},"TO-18",3,350,97,[34,41,45],{"pinNumber":35,"pinName":36,"electricalType":37,"isFiveVoltTolerant":38,"internalPull":39,"description":40},1,"E","passive",false,"none","Emisor, terminal 1: a la izquierda en el plano del fabricante, el más próximo a la lengüeta inferior izquierda. Conserve la orientación del plano.",{"pinNumber":42,"pinName":43,"electricalType":37,"isFiveVoltTolerant":38,"internalPull":39,"description":44},2,"B","Base, terminal 2: sobre el centro en el plano del fabricante, a 90° respecto a cada terminal 1 y 3.",{"pinNumber":30,"pinName":46,"electricalType":37,"isFiveVoltTolerant":38,"internalPull":39,"description":47},"C","Colector, terminal 3: a la derecha en el plano del fabricante. El plano citado no confirma una conexión eléctrica interna con la carcasa metálica.",{"storageTempMinC":49,"storageTempMaxC":50},-65,200,[52,59,64,69,75,79,84,88,93,96,103,107,112,118,123,128,131,136,140,144,147,150,155,160,166],{"symbol":53,"name":54,"typicalValue":55,"minValue":56,"unit":57,"testCondition":58},"BVCBO","Tensión de ruptura colector-base","—",75,"V","IC = 10 µA, TA = 25°C",{"symbol":60,"name":61,"typicalValue":55,"minValue":62,"unit":57,"testCondition":63},"BVCEO","Tensión de ruptura colector-emisor",40,"IC = 10 mA, TA = 25°C",{"symbol":65,"name":66,"typicalValue":55,"minValue":67,"unit":57,"testCondition":68},"BVEBO","Tensión de ruptura emisor-base",6,"IE = 10 µA, TA = 25°C",{"symbol":70,"name":71,"typicalValue":55,"maxValue":72,"unit":73,"testCondition":74},"ICBO","Corriente de corte de colector",10,"nA","VCB = 60 V, TA = 25°C",{"symbol":76,"name":77,"typicalValue":55,"maxValue":72,"unit":73,"testCondition":78},"IEBO","Corriente de corte de emisor","VEB = 3.0 V, TA = 25°C",{"symbol":80,"name":81,"typicalValue":55,"maxValue":82,"unit":57,"testCondition":83},"VCE_sat_150","Tensión de saturación colector-emisor a 150 mA",0.3,"IC = 150 mA, IB = 15 mA, TA = 25°C",{"symbol":85,"name":86,"typicalValue":55,"maxValue":35,"unit":57,"testCondition":87},"VCE_sat_500","Tensión de saturación colector-emisor a 500 mA","IC = 500 mA, IB = 50 mA, TA = 25°C",{"symbol":89,"name":90,"typicalValue":55,"minValue":91,"maxValue":92,"unit":57,"testCondition":83},"VBE_sat_150","Tensión de saturación base-emisor a 150 mA",0.6,1.2,{"symbol":94,"name":95,"typicalValue":55,"maxValue":42,"unit":57,"testCondition":87},"VBE_sat_500","Tensión de saturación base-emisor a 500 mA",{"symbol":97,"name":98,"typicalValue":55,"minValue":99,"maxValue":100,"unit":101,"testCondition":102},"hFE_150","Ganancia de corriente continua a 150 mA",100,300,"ratio","VCE = 10 V, IC = 150 mA, TA = 25°C",{"symbol":104,"name":105,"typicalValue":55,"minValue":62,"unit":101,"testCondition":106},"hFE_500","Ganancia de corriente continua a 500 mA","VCE = 10 V, IC = 500 mA, TA = 25°C",{"symbol":108,"name":109,"typicalValue":55,"minValue":100,"unit":110,"testCondition":111},"fT","Producto ganancia-ancho de banda","MHz","VCE = 20 V, IC = 20 mA, f = 100 MHz, TA = 25°C",{"symbol":113,"name":114,"typicalValue":55,"maxValue":115,"unit":116,"testCondition":117},"Cob","Capacitancia de salida",8,"pF","VCB = 10 V, IE = 0 A, f = 100 kHz, TA = 25°C",{"symbol":119,"name":120,"typicalValue":55,"maxValue":121,"unit":116,"testCondition":122},"Cib","Capacitancia de entrada",25,"VEB = 0.5 V, IC = 0 A, f = 100 kHz, TA = 25°C",{"symbol":124,"name":125,"typicalValue":55,"maxValue":72,"unit":126,"testCondition":127},"td","Tiempo de retardo","ns","VCC = 30 V, VBE = 0.5 V, IC = 150 mA, IB1 = 15 mA, TA = 25°C",{"symbol":129,"name":130,"typicalValue":55,"maxValue":121,"unit":126,"testCondition":127},"tr","Tiempo de subida",{"symbol":132,"name":133,"typicalValue":55,"maxValue":134,"unit":126,"testCondition":135},"ts","Tiempo de almacenamiento",225,"VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA, TA = 25°C",{"symbol":137,"name":138,"typicalValue":55,"maxValue":139,"unit":126,"testCondition":135},"tf","Tiempo de bajada",60,{"symbol":141,"name":142,"typicalValue":55,"maxValue":56,"unit":57,"testCondition":143},"VCBO_abs","Límite absoluto de tensión colector-base","TA = 25°C",{"symbol":145,"name":146,"typicalValue":55,"maxValue":62,"unit":57,"testCondition":143},"VCEO_abs","Límite absoluto de tensión colector-emisor",{"symbol":148,"name":149,"typicalValue":55,"maxValue":67,"unit":57,"testCondition":143},"VEBO_abs","Límite absoluto de tensión inversa emisor-base",{"symbol":151,"name":152,"typicalValue":55,"maxValue":153,"unit":154,"testCondition":143},"IC_abs","Límite absoluto de corriente continua de colector",800,"mA",{"symbol":156,"name":157,"typicalValue":55,"maxValue":158,"unit":159,"testCondition":143},"PD_TA_abs","Límite absoluto de disipación a temperatura ambiente",500,"mW",{"symbol":161,"name":162,"typicalValue":55,"maxValue":163,"unit":164,"testCondition":165},"PD_TC_abs","Límite absoluto de disipación a temperatura de carcasa",1.8,"W","TC = 25°C",{"symbol":167,"name":168,"typicalValue":55,"minValue":49,"maxValue":50,"unit":169,"testCondition":170},"TJ_abs","Límites absolutos de temperatura de unión en funcionamiento","°C","Límites de esfuerzo de temperatura de unión, no un rango de temperatura ambiente de operación",[172,177,181],{"title":173,"severity":174,"description":175,"mitigationStrategy":176},"Corriente de colector máxima absoluta (800 mA) frente a disipación térmica al aire libre en TO-18","critical","IC = 800 mA es un límite absoluto, no una corriente de trabajo térmicamente segura. Con IC = 500 mA e IB = 50 mA, ambos máximos de tensión dan una cota conservadora de pérdidas de conducción P = IC·VCE + IB·VBE = 0,5 A·1,0 V + 0,05 A·2,0 V = 0,6 W, superior a 500 mW a TA = 25°C antes de pérdidas de conmutación. No es una disipación medida ni afirma la coincidencia de ambos máximos.","Estime la disipación media y compruebe la trayectoria térmica real con margen: TJ ≈ TA + Pavg·ThetaJA al aire libre, o TJ ≈ TC + Pavg·ThetaJC con temperatura de carcasa controlada e incluyendo la trayectoria térmica externa. El valor de 1,8 W requiere TC = 25°C, no simplemente un disipador instalado. No existe un umbral universal de corriente para añadirlo.",{"title":178,"severity":174,"description":179,"mitigationStrategy":180},"Tensión de ruptura inversa emisor-base reducida (6,0 V) en circuitos astables e inductivos","El límite absoluto VEBO = 6,0 V y la característica separada de ruptura mínima BVEBO ≥ 6,0 V con IE = 10 µA son especificaciones distintas. Un ensayo de ruptura no autoriza la avalancha repetitiva; la hoja de datos no especifica esa capacidad. Los transitorios capacitivos de base deben permanecer dentro del límite de tensión inversa.","Compruebe la forma de onda real emisor-base durante el arranque y la conmutación. El diodo limitador inverso de un NPN lleva ánodo en E y cátodo en B; compruebe corriente de pulso, caída directa, tolerancias y cambios de temporización. El valor de alimentación no demuestra protección; un diodo en serie con la base no es un limitador equivalente.",{"title":182,"severity":183,"description":184,"mitigationStrategy":185},"Exigencias de corriente de base para saturación profunda y retardos de almacenamiento","warning","VCE(SAT) se caracteriza con IC = 150 mA, IB = 15 mA y con IC = 500 mA, IB = 50 mA. Estos puntos IC\u002FIB = 10 no son una regla universal de excitación. Una corriente de base insuficiente puede aumentar VCE y las pérdidas según la carga. El límite ts ≤ 225 ns solo se aplica con VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA y TA = 25°C, no con condiciones PWM arbitrarias.","Seleccione la excitación de base para la corriente, tensión y temperatura previstas usando las condiciones de caracterización aplicables. Compruebe la capacidad del controlador de suministrar y absorber corriente y sus tensiones de salida garantizadas; el punto de ensayo de 50 mA de base puede superar el límite de un GPIO. El apagado y cualquier circuito de control de carga requieren verificación propia del circuito.",[187,194],{"title":188,"url":17,"type":189,"authority":190,"publisher":23,"revision":191,"releaseDate":192,"language":193},"2N2221A, 2N2222A Silicon NPN Transistors","datasheet","primary","R5","2013-12-05","EN",{"title":195,"url":18,"type":189,"authority":196,"publisher":23,"revision":197,"releaseDate":198,"language":193},"Package Details - TO-18 Mechanical Drawing and Material Specification","secondary","R0\u002FR4","2020-02-10",[200],{"title":201,"schematicSlug":202,"topology":203},"Controlador de relé con BJT NPN 2N2222 \u002F 2N2222A y diodo flyback 1N4007","2n2222-relay-driver-flyback-protection","Conmutador saturado de lado bajo en emisor común con transistor NPN, resistencia limitadora de base, resistencia de purga pull-down de 10 kΩ, diodo flyback antiparalelo 1N4007 y desacoplo de bus de CC.",[],[],{"canonicalUrl":207,"metaTitle":208,"metaDescription":209,"primarySearchCluster":210,"structuredDataSchema":215},"https:\u002F\u002Fcircuitbase.tech\u002Fcomponent\u002F2n2222","2N2222A Transistor NPN: Patillaje, Hoja de Datos y Especificaciones | CircuitBase","Especificaciones técnicas completas del transistor de conmutación NPN 2N2222A de Central Semiconductor, patillaje TO-18 (E-B-C), límites absolutos de 40 V VCEO y 800 mA IC.",[211,212,213,214],"2n2222a patillaje","2n2222a transistor hoja de datos","2n2222a to-18","2n2222a conmutacion","Product",null,[218,228,236,247],{"id":219,"slug":219,"mpn":220,"primaryCategory":21,"manufacturers":221,"shortDescription":223,"packages":224,"packageTypes":227,"voltage":-1},"2n3904","2N3904",[222],"onsemi","Transistor de unión bipolar NPN de silicio de pequeña señal para uso general en encapsulado TO-92 con patillaje E-B-C y valores máximos absolutos de 40V VCEO y 200mA IC.",[225],{"packageType":226,"pinCount":30},"TO-92",[226],{"id":229,"slug":229,"mpn":230,"primaryCategory":21,"manufacturers":231,"shortDescription":232,"packages":233,"packageTypes":235,"voltage":-1},"2n3906","2N3906",[222],"Transistor de unión bipolar PNP de silicio de pequeña señal para uso general en encapsulado TO-92 con patillaje E-B-C y valores máximos absolutos de 40V VCEO y 200mA IC.",[234],{"packageType":226,"pinCount":30},[226],{"id":237,"slug":237,"mpn":238,"primaryCategory":239,"manufacturers":240,"shortDescription":242,"packages":243,"packageTypes":246,"voltage":-1},"1n4007","1N4007","diode_rectifier",[241],"Vishay","Rectificador Vishay 1N4007 DO-41 con VRRM máximo de 1000 V e IF(AV) de 1 A a TA = 75°C, terminales de 9.5 mm y carga resistiva o inductiva de 60 Hz.",[244],{"packageType":245,"pinCount":42},"DO-41",[245],{"id":248,"slug":248,"mpn":249,"primaryCategory":239,"manufacturers":250,"shortDescription":251,"packages":252,"packageTypes":255,"voltage":-1},"1n4148","1N4148",[241],"Diodo de conmutación axial Vishay 1N4148 en DO-35. Banda negra del cátodo, límite de tensión inversa continua de 75 V y recuperación inversa máxima de 4 ns bajo las condiciones de ensayo especificadas.",[253],{"packageType":254,"pinCount":42},"DO-35",[254],{},1793836420177]