[{"data":1,"prerenderedAt":257},["ShallowReactive",2],{"component:2n2222:en":3},{"component":4,"localizationFallbackIssues":216,"related":217,"equivalentSlugs":256},{"schemaVersion":5,"governance":6,"id":19,"mpn":20,"slug":19,"primaryCategory":21,"manufacturers":22,"lifecycleStatus":24,"shortDescription":25,"deepTechnicalOverview":26,"packages":27,"absoluteMaximums":48,"parametricAttributes":51,"gotchas":171,"datasheetUrl":17,"documentationSources":186,"applicationCircuits":199,"equivalents":204,"mountedOnBoards":205,"seo":206},"1.0.0",{"publication":7,"verification":10,"provenance":15},{"status":8,"publishedDate":9},"published","2026-10-14",{"status":11,"verifiedDate":9,"verifiedBy":12,"checklist":13},"verified","Codex (independent documentary review against exact manufacturer PDFs and current product rows; source-relative package verification and LLM localization review; owner publication GO, no bench or native-human signoff)",{"schema":14,"technicalFacts":14,"relationships":14,"sources":14},true,{"sourceUrls":16},[17,18],"https:\u002F\u002Fcentral.aeminc.com\u002Fdatasheets\u002F2N2221A.PDF","https:\u002F\u002Fcentral.aeminc.com\u002Fdocs\u002FENGINEERING\u002FPDD\u002FTO_18_PD.PDF","2n2222","2N2222A","bipolar_transistor",[23],"Central Semiconductor","active","Central Semiconductor 2N2222A NPN switching transistor in TO-18; absolute VCEO limit 40 V and continuous IC limit 800 mA at TA = 25°C.","This page covers only Central Semiconductor 2N2222A in TO-18, using datasheet 2N2221A.PDF, R5 (5-December 2013). Electrical characteristics apply at TA = 25°C unless stated otherwise, and only under the complete listed test conditions. Absolute maximum ratings are stress limits, not recommended operating conditions. In the manufacturer drawing E1 is left, B2 above center and C3 right, with the tab lower left; this identifies source-relative orientation without asserting an independently confirmed top or bottom view. The exact product-directory row is Active; appended PDN01195 concerns other listed types. Do not transfer these specifications to other manufacturers or plastic variants.",[28],{"packageType":29,"pinCount":30,"thermalResistanceThetaJA":31,"thermalResistanceThetaJC":32,"pins":33},"TO-18",3,350,97,[34,41,45],{"pinNumber":35,"pinName":36,"electricalType":37,"isFiveVoltTolerant":38,"internalPull":39,"description":40},1,"E","passive",false,"none","Emitter, lead 1: left in the manufacturer drawing, nearest the lower-left tab. Preserve the source drawing orientation.",{"pinNumber":42,"pinName":43,"electricalType":37,"isFiveVoltTolerant":38,"internalPull":39,"description":44},2,"B","Base, lead 2: above center in the manufacturer drawing, at 90° to each of leads 1 and 3.",{"pinNumber":30,"pinName":46,"electricalType":37,"isFiveVoltTolerant":38,"internalPull":39,"description":47},"C","Collector, lead 3: right in the manufacturer drawing. No internal electrical connection to the metal case is confirmed by the cited drawing.",{"storageTempMinC":49,"storageTempMaxC":50},-65,200,[52,59,64,69,75,79,84,88,93,96,103,107,112,118,123,128,131,136,140,144,147,150,155,160,166],{"symbol":53,"name":54,"typicalValue":55,"minValue":56,"unit":57,"testCondition":58},"BVCBO","Collector-Base Breakdown Voltage","—",75,"V","IC = 10 µA, TA = 25°C",{"symbol":60,"name":61,"typicalValue":55,"minValue":62,"unit":57,"testCondition":63},"BVCEO","Collector-Emitter Breakdown Voltage",40,"IC = 10 mA, TA = 25°C",{"symbol":65,"name":66,"typicalValue":55,"minValue":67,"unit":57,"testCondition":68},"BVEBO","Emitter-Base Breakdown Voltage",6,"IE = 10 µA, TA = 25°C",{"symbol":70,"name":71,"typicalValue":55,"maxValue":72,"unit":73,"testCondition":74},"ICBO","Collector Cutoff Current",10,"nA","VCB = 60 V, TA = 25°C",{"symbol":76,"name":77,"typicalValue":55,"maxValue":72,"unit":73,"testCondition":78},"IEBO","Emitter Cutoff Current","VEB = 3.0 V, TA = 25°C",{"symbol":80,"name":81,"typicalValue":55,"maxValue":82,"unit":57,"testCondition":83},"VCE_sat_150","Collector-Emitter Saturation Voltage at 150mA",0.3,"IC = 150 mA, IB = 15 mA, TA = 25°C",{"symbol":85,"name":86,"typicalValue":55,"maxValue":35,"unit":57,"testCondition":87},"VCE_sat_500","Collector-Emitter Saturation Voltage at 500mA","IC = 500 mA, IB = 50 mA, TA = 25°C",{"symbol":89,"name":90,"typicalValue":55,"minValue":91,"maxValue":92,"unit":57,"testCondition":83},"VBE_sat_150","Base-Emitter Saturation Voltage at 150mA",0.6,1.2,{"symbol":94,"name":95,"typicalValue":55,"maxValue":42,"unit":57,"testCondition":87},"VBE_sat_500","Base-Emitter Saturation Voltage at 500mA",{"symbol":97,"name":98,"typicalValue":55,"minValue":99,"maxValue":100,"unit":101,"testCondition":102},"hFE_150","DC Current Gain at 150mA",100,300,"ratio","VCE = 10 V, IC = 150 mA, TA = 25°C",{"symbol":104,"name":105,"typicalValue":55,"minValue":62,"unit":101,"testCondition":106},"hFE_500","DC Current Gain at 500mA","VCE = 10 V, IC = 500 mA, TA = 25°C",{"symbol":108,"name":109,"typicalValue":55,"minValue":100,"unit":110,"testCondition":111},"fT","Current-Gain Bandwidth Product","MHz","VCE = 20 V, IC = 20 mA, f = 100 MHz, TA = 25°C",{"symbol":113,"name":114,"typicalValue":55,"maxValue":115,"unit":116,"testCondition":117},"Cob","Output Capacitance",8,"pF","VCB = 10 V, IE = 0 A, f = 100 kHz, TA = 25°C",{"symbol":119,"name":120,"typicalValue":55,"maxValue":121,"unit":116,"testCondition":122},"Cib","Input Capacitance",25,"VEB = 0.5 V, IC = 0 A, f = 100 kHz, TA = 25°C",{"symbol":124,"name":125,"typicalValue":55,"maxValue":72,"unit":126,"testCondition":127},"td","Delay Time","ns","VCC = 30 V, VBE = 0.5 V, IC = 150 mA, IB1 = 15 mA, TA = 25°C",{"symbol":129,"name":130,"typicalValue":55,"maxValue":121,"unit":126,"testCondition":127},"tr","Rise Time",{"symbol":132,"name":133,"typicalValue":55,"maxValue":134,"unit":126,"testCondition":135},"ts","Storage Time",225,"VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA, TA = 25°C",{"symbol":137,"name":138,"typicalValue":55,"maxValue":139,"unit":126,"testCondition":135},"tf","Fall Time",60,{"symbol":141,"name":142,"typicalValue":55,"maxValue":56,"unit":57,"testCondition":143},"VCBO_abs","Collector-base voltage absolute limit","TA = 25°C",{"symbol":145,"name":146,"typicalValue":55,"maxValue":62,"unit":57,"testCondition":143},"VCEO_abs","Collector-emitter voltage absolute limit",{"symbol":148,"name":149,"typicalValue":55,"maxValue":67,"unit":57,"testCondition":143},"VEBO_abs","Emitter-base reverse-voltage absolute limit",{"symbol":151,"name":152,"typicalValue":55,"maxValue":153,"unit":154,"testCondition":143},"IC_abs","Continuous collector current absolute limit",800,"mA",{"symbol":156,"name":157,"typicalValue":55,"maxValue":158,"unit":159,"testCondition":143},"PD_TA_abs","Device dissipation absolute limit at ambient temperature",500,"mW",{"symbol":161,"name":162,"typicalValue":55,"maxValue":163,"unit":164,"testCondition":165},"PD_TC_abs","Device dissipation absolute limit at case temperature",1.8,"W","TC = 25°C",{"symbol":167,"name":168,"typicalValue":55,"minValue":49,"maxValue":50,"unit":169,"testCondition":170},"TJ_abs","Operating junction-temperature absolute limits","°C","Junction-temperature stress limits, not an ambient operating range",[172,177,181],{"title":173,"severity":174,"description":175,"mitigationStrategy":176},"Absolute Maximum Collector Current (800mA) Versus Free-Air Thermal Dissipation in TO-18","critical","IC = 800 mA is an absolute limit, not a thermally safe operating current. At IC = 500 mA and IB = 50 mA, using both voltage maxima yields a conservative conduction-loss bound P = IC·VCE + IB·VBE = 0.5 A·1.0 V + 0.05 A·2.0 V = 0.6 W, above 500 mW at TA = 25°C before switching losses. This is not measured dissipation or a claim that both maxima occur simultaneously.","Estimate average dissipation and check the real thermal path with margin: TJ ≈ TA + Pavg·ThetaJA in free air, or TJ ≈ TC + Pavg·ThetaJC with controlled case temperature and the external thermal path accounted for. The 1.8 W rating requires TC = 25°C, not simply an attached heatsink. There is no universal current threshold for heatsinking.",{"title":178,"severity":174,"description":179,"mitigationStrategy":180},"Emitter-Base Reverse Breakdown Voltage (6.0V) in Astable and Inductive Circuits","Absolute VEBO = 6.0 V and the separate minimum breakdown characteristic BVEBO ≥ 6.0 V at IE = 10 µA are different specifications. A breakdown test does not authorize repetitive avalanche; the datasheet provides no such allowance. Capacitive base transients must remain within the reverse-voltage limit.","Check the actual emitter-base waveform including startup and switching. An NPN reverse-voltage clamp diode has its anode at E and cathode at B; check pulse current, forward drop, tolerances and changed timing. A supply label alone does not prove protection; a series base diode is not an equivalent clamp.",{"title":182,"severity":183,"description":184,"mitigationStrategy":185},"Base Drive Requirements for Deep Saturation and Storage Time Delays","warning","VCE(SAT) is characterized at IC = 150 mA, IB = 15 mA and at IC = 500 mA, IB = 50 mA. These IC\u002FIB = 10 points are not a universal drive recipe. Insufficient drive can increase VCE and losses depending on load. The ts ≤ 225 ns limit applies only at VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA and TA = 25°C, not arbitrary PWM conditions.","Select base drive for the intended current, voltage and temperature using applicable characterized conditions. Check driver source\u002Fsink capability and guaranteed output voltages; the 50 mA base-current test point can exceed a GPIO rating. Turn-off and any charge-control circuit need their own circuit-level verification.",[187,194],{"title":188,"url":17,"type":189,"authority":190,"publisher":23,"revision":191,"releaseDate":192,"language":193},"2N2221A, 2N2222A Silicon NPN Transistors","datasheet","primary","R5","2013-12-05","EN",{"title":195,"url":18,"type":189,"authority":196,"publisher":23,"revision":197,"releaseDate":198,"language":193},"Package Details - TO-18 Mechanical Drawing and Material Specification","secondary","R0\u002FR4","2020-02-10",[200],{"title":201,"schematicSlug":202,"topology":203},"2N2222 \u002F 2N2222A NPN BJT Relay Driver with 1N4007 Flyback Clamping Diode","2n2222-relay-driver-flyback-protection","Common-emitter low-side NPN saturated relay driver switch with base limiting resistor, 10 kΩ pull-down bleeder, antiparallel 1N4007 flyback clamp diode, and DC bus decoupling.",[],[],{"canonicalUrl":207,"metaTitle":208,"metaDescription":209,"primarySearchCluster":210,"structuredDataSchema":215},"https:\u002F\u002Fcircuitbase.tech\u002Fcomponent\u002F2n2222","2N2222A NPN Transistor Pinout, Datasheet & Specs | CircuitBase","Complete Central Semiconductor 2N2222A NPN switching transistor technical specifications, TO-18 metal can pinout (E-B-C), 40V VCEO and 800mA IC absolute limits.",[211,212,213,214],"2n2222a pinout","2n2222a transistor datasheet","2n2222a to-18","2n2222a switching","Product",null,[218,228,236,247],{"id":219,"slug":219,"mpn":220,"primaryCategory":21,"manufacturers":221,"shortDescription":223,"packages":224,"packageTypes":227,"voltage":-1},"2n3904","2N3904",[222],"onsemi","General-purpose small-signal NPN silicon bipolar junction transistor in a TO-92 package with E-B-C pinout, featuring 40V VCEO and 200mA IC absolute maximum ratings.",[225],{"packageType":226,"pinCount":30},"TO-92",[226],{"id":229,"slug":229,"mpn":230,"primaryCategory":21,"manufacturers":231,"shortDescription":232,"packages":233,"packageTypes":235,"voltage":-1},"2n3906","2N3906",[222],"General-purpose small-signal PNP silicon bipolar junction transistor in a TO-92 package with E-B-C pinout, featuring 40V VCEO and 200mA IC absolute maximum ratings.",[234],{"packageType":226,"pinCount":30},[226],{"id":237,"slug":237,"mpn":238,"primaryCategory":239,"manufacturers":240,"shortDescription":242,"packages":243,"packageTypes":246,"voltage":-1},"1n4007","1N4007","diode_rectifier",[241],"Vishay","Vishay 1N4007 DO-41 rectifier with VRRM 1000 V maximum and IF(AV) 1 A at TA = 75°C, 9.5 mm leads and a 60 Hz resistive or inductive load.",[244],{"packageType":245,"pinCount":42},"DO-41",[245],{"id":248,"slug":248,"mpn":249,"primaryCategory":239,"manufacturers":250,"shortDescription":251,"packages":252,"packageTypes":255,"voltage":-1},"1n4148","1N4148",[241],"Vishay 1N4148 axial DO-35 switching diode. Black cathode band, 75 V continuous reverse-voltage limit and 4 ns maximum reverse recovery under the specified test conditions.",[253],{"packageType":254,"pinCount":42},"DO-35",[254],{},1793836420129]