[{"data":1,"prerenderedAt":196},["ShallowReactive",2],{"component:1n4148:en":3},{"component":4,"localizationFallbackIssues":154,"related":155,"equivalentSlugs":195},{"schemaVersion":5,"governance":6,"id":18,"mpn":19,"slug":18,"primaryCategory":20,"manufacturers":21,"lifecycleStatus":23,"shortDescription":24,"deepTechnicalOverview":25,"packages":26,"absoluteMaximums":42,"parametricAttributes":47,"gotchas":111,"datasheetUrl":17,"documentationSources":126,"applicationCircuits":136,"equivalents":137,"mountedOnBoards":142,"seo":143},"1.0.0",{"publication":7,"verification":10,"provenance":15},{"status":8,"publishedDate":9},"published","2026-10-13",{"status":11,"verifiedDate":9,"verifiedBy":12,"checklist":13},"verified","Codex (documentary review against Vishay 81857 Rev. 1.6; owner publication GO; LLM localization review; no bench claim)",{"schema":14,"technicalFacts":14,"relationships":14,"sources":14},true,{"sourceUrls":16},[17],"https:\u002F\u002Fwww.vishay.com\u002Fdocs\u002F81857\u002F1n4148.pdf","1n4148","1N4148","diode_rectifier",[22],"Vishay","active","Vishay 1N4148 axial DO-35 switching diode. Black cathode band, 75 V continuous reverse-voltage limit and 4 ns maximum reverse recovery under the specified test conditions.","This reference covers Vishay 1N4148, ordering codes 1N4148-TAP and 1N4148TR, using datasheet 81857 Rev. 1.6 (07-Nov-2024). It is a silicon epitaxial planar switching diode in an axial DO-35 (DO-204AH) package. The black band identifies the cathode; CircuitBase numbers the cathode K as terminal 1 and the anode A as terminal 2 for this catalogue. These are passive terminals, not GPIO inputs with a 5 V logic-tolerance specification.\n\nDistinguish the 75 V continuous reverse-voltage absolute limit from the 100 V repetitive peak reverse-voltage absolute limit. Breakdown voltage is separately specified at a minimum of 100 V with IR = 100 µA, tp\u002FT = 0.01 and tp = 0.3 ms. Absolute ratings are not recommended operating points.\n\nAt TA = 25°C, maximum forward voltage is 1 V at IF = 10 mA. Maximum capacitance is 4 pF with VR = 0 V, f = 1 MHz and VHF = 50 mV. Reverse recovery is at most 4 ns with IF = 10 mA, VR = 6 V, iR = 0.1 × IR and RL = 100 Ω; the separate 8 ns test uses IF = IR = 10 mA and iR = 1 mA. Neither time is an unconditional switching guarantee.\n\nPower dissipation is rated at 500 mW with l = 4 mm and TL \u003C= 25°C, or 440 mW with l = 4 mm and TL = 45°C. The stated RthJA = 350 °C\u002FW requires l = 4 mm and constant TL. The junction-temperature limit is 175°C; storage is -65 to +150°C. Evaluate the actual electrical and thermal conditions rather than treating a package rating as a guaranteed circuit current.",[27],{"packageType":28,"pinCount":29,"thermalResistanceThetaJA":30,"pins":31},"DO-35",2,350,[32,39],{"pinNumber":33,"pinName":34,"electricalType":35,"isFiveVoltTolerant":36,"internalPull":37,"description":38},1,"K","passive",false,"none","Cathode K, identified by the black body band. Terminal 1 is the CircuitBase catalogue numbering convention; this is a passive diode terminal.",{"pinNumber":29,"pinName":40,"electricalType":35,"isFiveVoltTolerant":36,"internalPull":37,"description":41},"A","Anode A, opposite the black cathode band. Terminal 2 is the CircuitBase catalogue numbering convention; forward conventional current flows from A to K.",{"powerDissipationMaxW":43,"operatingTempMaxC":44,"storageTempMinC":45,"storageTempMaxC":46},0.5,175,-65,150,[48,55,59,63,68,72,76,80,85,89,95,101,106],{"symbol":49,"name":50,"typicalValue":51,"maxValue":52,"unit":53,"testCondition":54},"V_RRM","Repetitive Peak Reverse Voltage","—",100,"V","TA = 25°C",{"symbol":56,"name":57,"typicalValue":51,"maxValue":58,"unit":53,"testCondition":54},"V_R","Continuous Reverse Voltage",75,{"symbol":60,"name":61,"typicalValue":51,"minValue":52,"unit":53,"testCondition":62},"V_BR","Breakdown Voltage","IR = 100 µA, tp\u002FT = 0.01, tp = 0.3 ms, TA = 25°C",{"symbol":64,"name":65,"typicalValue":51,"maxValue":66,"unit":67,"testCondition":54},"I_F","Forward Continuous Current",300,"mA",{"symbol":69,"name":70,"typicalValue":51,"maxValue":46,"unit":67,"testCondition":71},"I_F_AV","Average Forward Current","VR = 0, TA = 25°C",{"symbol":73,"name":74,"typicalValue":51,"maxValue":75,"unit":67,"testCondition":54},"I_FRM","Repetitive Peak Forward Current",500,{"symbol":77,"name":78,"typicalValue":51,"maxValue":29,"unit":40,"testCondition":79},"I_FSM_1us","Non-Repetitive Peak Forward Surge Current (1 µs)","tp = 1 µs, TA = 25°C",{"symbol":81,"name":82,"typicalValue":51,"maxValue":75,"unit":83,"testCondition":84},"P_tot","Power Dissipation","mW","l = 4 mm, TL \u003C= 25°C",{"symbol":86,"name":87,"typicalValue":51,"maxValue":33,"unit":53,"testCondition":88},"V_F","Forward Voltage Drop","IF = 10 mA, TA = 25°C",{"symbol":90,"name":91,"typicalValue":51,"maxValue":92,"unit":93,"testCondition":94},"I_R","Reverse Leakage Current",0.025,"µA","VR = 20 V, TA = 25°C",{"symbol":96,"name":97,"typicalValue":51,"maxValue":98,"unit":99,"testCondition":100},"t_rr_4ns","Reverse Recovery Time (4 ns test)",4,"ns","IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Ω, TA = 25°C",{"symbol":102,"name":103,"typicalValue":51,"maxValue":104,"unit":99,"testCondition":105},"t_rr_8ns","Reverse Recovery Time (8 ns test)",8,"IF = IR = 10 mA, iR = 1 mA, TA = 25°C",{"symbol":107,"name":108,"typicalValue":51,"maxValue":98,"unit":109,"testCondition":110},"C_D","Diode Capacitance","pF","VR = 0 V, f = 1 MHz, VHF = 50 mV, TA = 25°C",[112,117,122],{"title":113,"severity":114,"description":115,"mitigationStrategy":116},"Current and power limits require their stated conditions","critical","At TA = 25°C, the absolute ratings are IF = 300 mA continuous, IF(AV) = 150 mA with VR = 0, and IFRM = 500 mA repetitive peak. They describe different conditions. Ptot = 500 mW requires l = 4 mm and TL \u003C= 25°C; Ptot = 440 mW is specified at TL = 45°C with the same lead length. RthJA = 350 °C\u002FW assumes l = 4 mm and constant TL.","Check the actual waveform, power dissipation, lead temperature and thermal layout against the applicable ratings. Keep junction temperature within the 175°C absolute limit; do not infer a guaranteed circuit current from a single current or power rating.",{"title":118,"severity":119,"description":120,"mitigationStrategy":121},"Continuous reverse voltage is not the repetitive peak rating","warning","The datasheet specifies VR = 75 V and VRRM = 100 V as distinct absolute limits. The separately tested minimum breakdown voltage of 100 V does not make 100 V a continuous operating-voltage recommendation. The black body band marks K; the catalogue terminal numbers are a display convention.","Identify the cathode band and check the actual reverse-voltage waveform against the appropriate continuous and repetitive peak limits. These passive terminals have no GPIO-style 5 V tolerance rating.",{"title":123,"severity":119,"description":124,"mitigationStrategy":125},"The 2 A surge rating applies to a 1 µs pulse","Vishay 81857 Rev. 1.6 specifies IFSM = 2 A at tp = 1 µs and TA = 25°C. It does not specify a 1 A, 1 s surge rating. This short-pulse absolute rating is not a continuous or repetitive current allowance.","Evaluate the intended pulse and thermal conditions using applicable manufacturer data. Do not extrapolate the 1 µs rating into an allowable longer pulse, repetition rate or energy-clamp capability.",[127],{"title":128,"url":17,"type":129,"authority":130,"publisher":131,"documentNumber":132,"revision":133,"releaseDate":134,"language":135},"1N4148 Small Signal Fast Switching Diodes Datasheet","datasheet","primary","Vishay Semiconductors","81857","1.6","2024-11-07","EN",[],[138],{"equivalentMpn":139,"manufacturer":22,"compatibilityType":140,"parameterDifferences":141},"1N914","pin_to_pin_drop_in","Vishay 81857 explicitly names 1N914 as an electrically equivalent diode. Check the selected manufacturer part and package for the intended application; the statement does not establish identical silicon geometry or every test condition.",[],{"canonicalUrl":144,"metaTitle":145,"metaDescription":146,"primarySearchCluster":147,"structuredDataSchema":153},"https:\u002F\u002Fcircuitbase.tech\u002Fcomponent\u002F1n4148","Vishay 1N4148 Pinout (DO-35), Datasheet and Test Conditions","Vishay 1N4148 DO-35 cathode-band identification, 75 V continuous and 100 V repetitive peak reverse limits, and qualified current, recovery and thermal specifications.",[148,149,150,151,152],"1n4148 pinout","1n4148 datasheet","1n4148 specs","1n4148 cathode band","1n4148 reverse recovery time","Product",null,[156,165,177,187],{"id":157,"slug":157,"mpn":158,"primaryCategory":20,"manufacturers":159,"shortDescription":160,"packages":161,"packageTypes":164,"voltage":-1},"1n4007","1N4007",[22],"Vishay 1N4007 DO-41 rectifier with VRRM 1000 V maximum and IF(AV) 1 A at TA = 75°C, 9.5 mm leads and a 60 Hz resistive or inductive load.",[162],{"packageType":163,"pinCount":29},"DO-41",[163],{"id":166,"slug":166,"mpn":167,"primaryCategory":168,"manufacturers":169,"shortDescription":171,"packages":172,"packageTypes":176,"voltage":-1},"2n2222","2N2222A","bipolar_transistor",[170],"Central Semiconductor","Central Semiconductor 2N2222A NPN switching transistor in TO-18; absolute VCEO limit 40 V and continuous IC limit 800 mA at TA = 25°C.",[173],{"packageType":174,"pinCount":175},"TO-18",3,[174],{"id":178,"slug":178,"mpn":179,"primaryCategory":168,"manufacturers":180,"shortDescription":182,"packages":183,"packageTypes":186,"voltage":-1},"2n3904","2N3904",[181],"onsemi","General-purpose small-signal NPN silicon bipolar junction transistor in a TO-92 package with E-B-C pinout, featuring 40V VCEO and 200mA IC absolute maximum ratings.",[184],{"packageType":185,"pinCount":175},"TO-92",[185],{"id":188,"slug":188,"mpn":189,"primaryCategory":168,"manufacturers":190,"shortDescription":191,"packages":192,"packageTypes":194,"voltage":-1},"2n3906","2N3906",[181],"General-purpose small-signal PNP silicon bipolar junction transistor in a TO-92 package with E-B-C pinout, featuring 40V VCEO and 200mA IC absolute maximum ratings.",[193],{"packageType":185,"pinCount":175},[185],{},1793836419846]